Synthesis of one-dimensional GaN nanostructures and GaN/CNT/SI/silicate nanocables by metalorganic chemical vapor deposition

L. J. Chen*, Ming-Chang Lu, Y. L. Chueh, L. J. Chou, H. L. Hsiao

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

One-dimensional GaN nanostructures and GaN/CNT/Si/silicate nanocables have been synthesized by metalorganic chemical vapor deposition. Nanotubes were formed at 600°C, whereas nanowires were grown at 800-1000°C manly through vapor-liquid-solid mechanism. At 1100°C, stacked hexagonal pyramid structure was grown. The growth of the complex nanostructure was inferred to be governed by both surface diffusion and bulk diffusion. The nanotubes were characterized to be of single crystalline wurtzite phase and were grown along the [110]GaN direction. It is proposed that the formation of Ga-Au eutectic phase, Ga supersaturation and precipitation, as well as a limited nitridation efficiency at the low temperature led to the peculiar nanostructures. For the synthesis of GaN/CNT/Si/silicate nanocables, carbon nanotubes were used as the templates. The nanostructures include a core of GaN nanodots and nanorods inside carbon nanotubes sheathed by amorphous Si and silicate nanotubes. The method can efficiently control the diameter of GaN nanostructure in molecular-scale (2-10 nm).

Original languageEnglish
Pages232-246
Number of pages15
StatePublished - 1 Dec 2005
Event207th ECS Meeting - Quebec, Canada
Duration: 16 May 200520 May 2005

Conference

Conference207th ECS Meeting
CountryCanada
CityQuebec
Period16/05/0520/05/05

Fingerprint Dive into the research topics of 'Synthesis of one-dimensional GaN nanostructures and GaN/CNT/SI/silicate nanocables by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

  • Cite this

    Chen, L. J., Lu, M-C., Chueh, Y. L., Chou, L. J., & Hsiao, H. L. (2005). Synthesis of one-dimensional GaN nanostructures and GaN/CNT/SI/silicate nanocables by metalorganic chemical vapor deposition. 232-246. Paper presented at 207th ECS Meeting, Quebec, Canada.