Synthesis of microcrystalline silicon at room temperature using ICP

Jia Hung Wu; Jia Min Shieh; Bau Tong Dai; Yew-Chuhg Wu

doi:10.1149/1.1718258

Synthesis of microcrystalline silicon at room temperature using ICP

Jia Hung Wu^*, Jia Min Shieh, Bau Tong Dai, Yew-Chuhg Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Hydrogenated microcrystalline silicon (μc-Si:H) channel layers were synthesized at a temperature below 100°C by inductively coupled plasma (ICP) methods. High ionization efficiency and low ion bombardment from the ICP, enabled the use of high ICP power and, thus, extremely dense plasma or markedly increased electron temperature, promoting the diffusion capability of the reactive radicals that eventually yield ICP μc-Si:H films with large grains of several tens of nanometers, a high deposition rate of 5 Å/s, and a smooth roughness of ∼1 nm. Accordingly, the epitaxial growth of μc-Si:H films at room temperature is demonstrated.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	6
DOIs	https://doi.org/10.1149/1.1718258
State	Published - 16 Jun 2004

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title = "Synthesis of microcrystalline silicon at room temperature using ICP",

abstract = "Hydrogenated microcrystalline silicon (μc-Si:H) channel layers were synthesized at a temperature below 100°C by inductively coupled plasma (ICP) methods. High ionization efficiency and low ion bombardment from the ICP, enabled the use of high ICP power and, thus, extremely dense plasma or markedly increased electron temperature, promoting the diffusion capability of the reactive radicals that eventually yield ICP μc-Si:H films with large grains of several tens of nanometers, a high deposition rate of 5 {\AA}/s, and a smooth roughness of ∼1 nm. Accordingly, the epitaxial growth of μc-Si:H films at room temperature is demonstrated.",

author = "Wu, {Jia Hung} and Shieh, {Jia Min} and Dai, {Bau Tong} and Yew-Chuhg Wu",

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T1 - Synthesis of microcrystalline silicon at room temperature using ICP

AU - Wu, Jia Hung

AU - Shieh, Jia Min

AU - Dai, Bau Tong

AU - Wu, Yew-Chuhg

PY - 2004/6/16

Y1 - 2004/6/16

N2 - Hydrogenated microcrystalline silicon (μc-Si:H) channel layers were synthesized at a temperature below 100°C by inductively coupled plasma (ICP) methods. High ionization efficiency and low ion bombardment from the ICP, enabled the use of high ICP power and, thus, extremely dense plasma or markedly increased electron temperature, promoting the diffusion capability of the reactive radicals that eventually yield ICP μc-Si:H films with large grains of several tens of nanometers, a high deposition rate of 5 Å/s, and a smooth roughness of ∼1 nm. Accordingly, the epitaxial growth of μc-Si:H films at room temperature is demonstrated.

AB - Hydrogenated microcrystalline silicon (μc-Si:H) channel layers were synthesized at a temperature below 100°C by inductively coupled plasma (ICP) methods. High ionization efficiency and low ion bombardment from the ICP, enabled the use of high ICP power and, thus, extremely dense plasma or markedly increased electron temperature, promoting the diffusion capability of the reactive radicals that eventually yield ICP μc-Si:H films with large grains of several tens of nanometers, a high deposition rate of 5 Å/s, and a smooth roughness of ∼1 nm. Accordingly, the epitaxial growth of μc-Si:H films at room temperature is demonstrated.

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U2 - 10.1149/1.1718258

DO - 10.1149/1.1718258

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VL - 7

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 6

ER -

Synthesis of microcrystalline silicon at room temperature using ICP

Abstract

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