Separation by plasma implantation of oxygen (SPIMOX) is a novel method for fabricating silicon-on-insulator (SOI) wafers. SPIMOX wafers were fabricated using an oxygen-plasma from an ECR plasma source operating at 2.45 GHz. The implantation was carried out with an implant voltage of 70 kV for 3 min to achieve a dose of 2×1017 cm-2. The wafer temperature was held at about 600°C during the implantation. The secondary ion mass spectroscopy spectrum of the as-implanted sample reveals a peaked oxygen profile below the surface. The implanted wafer was annealed at 1250°C for 2 hours. A cross-sectional transmission electron microscopy micrograph of the annealed sample shows an SOI structure with a silicon over-layer of 500 angstrom and buried oxide of 250 angstrom thickness.
|Number of pages||2|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 IEEE International SOI Conference - Tucson, AZ, USA|
Duration: 3 Oct 1995 → 5 Oct 1995
|Conference||Proceedings of the 1995 IEEE International SOI Conference|
|City||Tucson, AZ, USA|
|Period||3/10/95 → 5/10/95|