Synthesis of buried oxide by plasma implantation with oxygen and water plasma

J. B. Liu*, S. S.K. Iyer, J. Min, P. K. Chu, R. Gronsky, Chen-Ming Hu, N. W. Chueng

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

7 Scopus citations

Abstract

Separation by plasma implantation of oxygen (SPIMOX) is a novel method for fabricating silicon-on-insulator (SOI) wafers. SPIMOX wafers were fabricated using an oxygen-plasma from an ECR plasma source operating at 2.45 GHz. The implantation was carried out with an implant voltage of 70 kV for 3 min to achieve a dose of 2×1017 cm-2. The wafer temperature was held at about 600°C during the implantation. The secondary ion mass spectroscopy spectrum of the as-implanted sample reveals a peaked oxygen profile below the surface. The implanted wafer was annealed at 1250°C for 2 hours. A cross-sectional transmission electron microscopy micrograph of the annealed sample shows an SOI structure with a silicon over-layer of 500 angstrom and buried oxide of 250 angstrom thickness.

Original languageEnglish
Pages166-167
Number of pages2
StatePublished - 1 Dec 1995
EventProceedings of the 1995 IEEE International SOI Conference - Tucson, AZ, USA
Duration: 3 Oct 19955 Oct 1995

Conference

ConferenceProceedings of the 1995 IEEE International SOI Conference
CityTucson, AZ, USA
Period3/10/955/10/95

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