Synthesis and characterization of one-dimensional Ag-doped ZnO/Ga-doped ZnO coaxial nanostructure diodes

Hsien Ming Chiu, Yu Tsui Chang, Wen-Wei Wu, Jenn Ming Wu*

*Corresponding author for this work

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

In the pursuit of high injection current diode nanodevices, entire one-dimensional (1D) ZnO coaxial nanostructures with p-n homojunctions is one of the ideal structures. In this study, we synthesized entire 1D ZnO-based coaxial homojunction diodes with p-type Ag-doped ZnO (SZO) nanostructure shells covering n-type Ga-doped ZnO (GZO) nanopagoda (NPG) cores by a metal-organic chemical vapor deposition (MOCVD) technique. The entire 1D SZO-GZO and SZO-ZnO coaxial nanostructures exhibit better diode characteristics, such as lower threshold voltage, better rectification ratios, and better ideality factor n, than that reported for either 2D or 2D-1D p-n heterojunction and/or homojunction diodes. The binding energies of Ga and Ag were evaluated by low-temperature and temperature-dependent photoluminescence. In comparison, the SZO-GZO coaxial p-n nanostructures display better diode performance than the SZO-ZnO ones.

Original languageEnglish
Pages (from-to)5183-5191
Number of pages9
JournalACS Applied Materials and Interfaces
Volume6
Issue number7
DOIs
StatePublished - 9 Apr 2014

Keywords

  • binding energy
  • diode
  • MOCVD
  • nanostructures
  • p-n homojunction
  • zinc oxide

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