Symmetry realization of BSIM model with dynamic reference method for circuit simulation

Xuemei Xi, Kanyu Cao, Jin He, Hui Wan, Mansun Chan, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The dynamic reference method is implemented in BSIM4 to realize both continuity and symmetry under the source referencing MOSFET model framework. The method achieves accurate results at a much faster speed compared with other body-referencing and surface potential based approaches.

Original languageEnglish
Title of host publication60th Device Research Conference, DRC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages65-66
Number of pages2
ISBN (Electronic)0780373170
DOIs
StatePublished - 1 Jan 2002
Event60th Device Research Conference, DRC 2002 - Santa Barbara, United States
Duration: 24 Jun 200226 Jun 2002

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2002-January
ISSN (Print)1548-3770

Conference

Conference60th Device Research Conference, DRC 2002
CountryUnited States
CitySanta Barbara
Period24/06/0226/06/02

Keywords

  • Circuit simulation
  • Circuit testing
  • Equations
  • Forward contracts
  • MOS devices
  • MOSFET circuits
  • Mathematical model
  • Resistors
  • Virtual manufacturing
  • Voltage

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  • Cite this

    Xi, X., Cao, K., He, J., Wan, H., Chan, M., & Hu, C-M. (2002). Symmetry realization of BSIM model with dynamic reference method for circuit simulation. In 60th Device Research Conference, DRC 2002 (pp. 65-66). [1029514] (Device Research Conference - Conference Digest, DRC; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2002.1029514