Symmetrical dipole contribution from planar defects on m-plane ZnO epitaxial films

Chung Wei Liu, Shoou Jinn Chang, Yen Teng Ho, Li Chang, Kuang Yao Lo*, Sanjaya Brahma

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The planar defects such as basal stacking faults (BSFs) are probed on m-plane ZnO grown on LaAlO3(112) substrate by reflective second harmonic generation (RSHG). The BSFs result in nonvanishing single-direction dipoles that behave similar to a mirror-like symmetrical dipole. The RSHG pattern from m-plane ZnO comprised of not only the bulk dipole contribution of ZnO but also an additional mirror-like symmetrical dipole contribution from BSF defects. Transmission electron microscopy image displays the presence of BSFs that lie in the c-plane of ZnO and agrees well with RSHG results. Planar BSFs are formed due to the anisotropic stress relaxation between m-plane ZnO film and LaAlO3(112) substrate, resulting in higher-quality m-plane ZnO films.

Original languageEnglish
Pages (from-to)883-888
Number of pages6
JournalCurrent Nanoscience
Issue number6
StatePublished - 13 Oct 2014


  • Basal stacking fault
  • Non-polar plane
  • Second harmonic generation
  • ZnO

Fingerprint Dive into the research topics of 'Symmetrical dipole contribution from planar defects on m-plane ZnO epitaxial films'. Together they form a unique fingerprint.

Cite this