Symmetric Gate-Overlapped LDD Poly-Si TFTs with Selective and Isotropic Deposited Ni Sub-gate

Bo Ting Chen*, Chang Ho Tseng, Huang-Chung Cheng, Chi Wei Chao, Ting Kuo Chang, Jian Hao Lu, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A novel fabrication process for self-aligned gate-overlapped lightly doped drain (SAGOLDD) thin-film transistors (TFTs) using excimer laser irradiation to form the graded LDD dopant profile and selectively plated Ni surrounding-gate to form the gate-overlap is demonstrated. The SAGOLDD TFT device exhibits much lower leakage current, higher on/off current ratio and better hot carrier stress endurance than self-aligned (SA) TFTs due to the lower electric field generated by graded LDD dopant profile.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number2
DOIs
StatePublished - 8 Apr 2004

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