Switching of 3300v scaled igbt by 5v gate drive

T. Hiramoto, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, T. Sarava, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohash, K. Itou, T. Takakura, M. FukuiS. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, the switching of 3300V IGBTs by 5V gate drive voltage has been successfully demonstrated for the first time. IGBT was designed based on a scaling principle. Comparing with conventional 15V-driven non-scaled IGBTs, the tum-off tail current of the scaled devices significantly decreased. The improvement of E-{\mathrm{off}} vs V-{\mathrm{cesat}} relationship by 35% was achieved.

Original languageEnglish
Title of host publicationProceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019
EditorsFan Ye, Ting-Ao Tang
PublisherIEEE Computer Society
ISBN (Electronic)9781728107356
DOIs
StatePublished - Oct 2019
Event13th IEEE International Conference on ASIC, ASICON 2019 - Chongqing, China
Duration: 29 Oct 20191 Nov 2019

Publication series

NameProceedings of International Conference on ASIC
ISSN (Print)2162-7541
ISSN (Electronic)2162-755X

Conference

Conference13th IEEE International Conference on ASIC, ASICON 2019
CountryChina
CityChongqing
Period29/10/191/11/19

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