Switching kinetics in epitaxial BiFeO 3 thin films

Daniel Pantel; Ying-hao Chu; Lane W. Martin; Ramamoorthy Ramesh; Dietrich Hesse; Marin Alexe

doi:10.1063/1.3392884

Switching kinetics in epitaxial BiFeO ₃ thin films

Daniel Pantel^*, Ying-hao Chu, Lane W. Martin, Ramamoorthy Ramesh, Dietrich Hesse, Marin Alexe

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The switching kinetics in epitaxial (001)-, (110)-, and (111)-oriented BiFeO ₃ thin films were investigated as a function of applied field and time. It was found that the ferroelectric switching behavior obeys the Kolmogorov-Avrami-Ishibashi theory only in the high field range. The detailed behavior depends on the film orientation. A comparison with standard systems, such as epitaxial Pb (Zr _0.2 Ti _0.8 ) O ₃ films, reveals some similarities as well as some differences. For instance, the presence of 109° and 71° ferroelastic domain walls might be ruled out as the source of the decrease in switched polarization at low applied fields, in contrast to what is the case for a/c domain walls in tetragonal Pb (Zr _0.2 Ti _0.8 ) O ₃ .

Original language	English
Article number	084111
Number of pages	4
Journal	Journal of Applied Physics
Volume	107
Issue number	8
DOIs	https://doi.org/10.1063/1.3392884
State	Published - 15 Apr 2010

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title = "Switching kinetics in epitaxial BiFeO 3 thin films",

abstract = " The switching kinetics in epitaxial (001)-, (110)-, and (111)-oriented BiFeO 3 thin films were investigated as a function of applied field and time. It was found that the ferroelectric switching behavior obeys the Kolmogorov-Avrami-Ishibashi theory only in the high field range. The detailed behavior depends on the film orientation. A comparison with standard systems, such as epitaxial Pb (Zr 0.2 Ti 0.8 ) O 3 films, reveals some similarities as well as some differences. For instance, the presence of 109° and 71° ferroelastic domain walls might be ruled out as the source of the decrease in switched polarization at low applied fields, in contrast to what is the case for a/c domain walls in tetragonal Pb (Zr 0.2 Ti 0.8 ) O 3 .",

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T1 - Switching kinetics in epitaxial BiFeO 3 thin films

AU - Pantel, Daniel

AU - Chu, Ying-hao

AU - Martin, Lane W.

AU - Ramesh, Ramamoorthy

AU - Hesse, Dietrich

AU - Alexe, Marin

PY - 2010/4/15

Y1 - 2010/4/15

N2 - The switching kinetics in epitaxial (001)-, (110)-, and (111)-oriented BiFeO 3 thin films were investigated as a function of applied field and time. It was found that the ferroelectric switching behavior obeys the Kolmogorov-Avrami-Ishibashi theory only in the high field range. The detailed behavior depends on the film orientation. A comparison with standard systems, such as epitaxial Pb (Zr 0.2 Ti 0.8 ) O 3 films, reveals some similarities as well as some differences. For instance, the presence of 109° and 71° ferroelastic domain walls might be ruled out as the source of the decrease in switched polarization at low applied fields, in contrast to what is the case for a/c domain walls in tetragonal Pb (Zr 0.2 Ti 0.8 ) O 3 .

AB - The switching kinetics in epitaxial (001)-, (110)-, and (111)-oriented BiFeO 3 thin films were investigated as a function of applied field and time. It was found that the ferroelectric switching behavior obeys the Kolmogorov-Avrami-Ishibashi theory only in the high field range. The detailed behavior depends on the film orientation. A comparison with standard systems, such as epitaxial Pb (Zr 0.2 Ti 0.8 ) O 3 films, reveals some similarities as well as some differences. For instance, the presence of 109° and 71° ferroelastic domain walls might be ruled out as the source of the decrease in switched polarization at low applied fields, in contrast to what is the case for a/c domain walls in tetragonal Pb (Zr 0.2 Ti 0.8 ) O 3 .

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Switching kinetics in epitaxial BiFeO 3 thin films

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Switching kinetics in epitaxial BiFeO ₃ thin films