Switching kinetics in epitaxial BiFeO 3 thin films

Daniel Pantel*, Ying-hao Chu, Lane W. Martin, Ramamoorthy Ramesh, Dietrich Hesse, Marin Alexe

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

The switching kinetics in epitaxial (001)-, (110)-, and (111)-oriented BiFeO 3 thin films were investigated as a function of applied field and time. It was found that the ferroelectric switching behavior obeys the Kolmogorov-Avrami-Ishibashi theory only in the high field range. The detailed behavior depends on the film orientation. A comparison with standard systems, such as epitaxial Pb (Zr 0.2 Ti 0.8 ) O 3 films, reveals some similarities as well as some differences. For instance, the presence of 109° and 71° ferroelastic domain walls might be ruled out as the source of the decrease in switched polarization at low applied fields, in contrast to what is the case for a/c domain walls in tetragonal Pb (Zr 0.2 Ti 0.8 ) O 3 .

Original languageEnglish
Article number084111
Number of pages4
JournalJournal of Applied Physics
Volume107
Issue number8
DOIs
StatePublished - 15 Apr 2010

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