Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

Jui Yuan Chen, Chun Wei Huang, Chung Hua Chiu, Yu Ting Huang, Wen-Wei Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

99 Scopus citations

Abstract

The filament in aAu/Ta2O5/Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects.

Original languageEnglish
Pages (from-to)5028-5033
Number of pages6
JournalAdvanced Materials
Volume27
Issue number34
DOIs
StatePublished - 1 Sep 2015

Keywords

  • in situ TEM
  • memristors
  • nanofilaments
  • resistive switching
  • valence change memories (VCM)

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