Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

Jui Yuan Chen; Chun Wei Huang; Chung Hua Chiu; Yu Ting Huang; Wen-Wei Wu

doi:10.1002/adma.201502758

Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

Jui Yuan Chen, Chun Wei Huang, Chung Hua Chiu, Yu Ting Huang, Wen-Wei Wu^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

99 Scopus citations

Abstract

The filament in aAu/Ta₂O₅/Au system is analyzed and determined to be a nanoscaled TaO_2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects.

Original language	English
Pages (from-to)	5028-5033
Number of pages	6
Journal	Advanced Materials
Volume	27
Issue number	34
DOIs	https://doi.org/10.1002/adma.201502758
State	Published - 1 Sep 2015

Keywords

in situ TEM
memristors
nanofilaments
resistive switching
valence change memories (VCM)

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title = "Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament",

abstract = "The filament in aAu/Ta2O5/Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects.",

keywords = "in situ TEM, memristors, nanofilaments, resistive switching, valence change memories (VCM)",

author = "Chen, {Jui Yuan} and Huang, {Chun Wei} and Chiu, {Chung Hua} and Huang, {Yu Ting} and Wen-Wei Wu",

year = "2015",

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T1 - Switching Kinetic of VCM-Based Memristor

T2 - Evolution and Positioning of Nanofilament

AU - Chen, Jui Yuan

AU - Huang, Chun Wei

AU - Chiu, Chung Hua

AU - Huang, Yu Ting

AU - Wu, Wen-Wei

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The filament in aAu/Ta2O5/Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects.

AB - The filament in aAu/Ta2O5/Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects.

KW - in situ TEM

KW - memristors

KW - nanofilaments

KW - resistive switching

KW - valence change memories (VCM)

UR - http://www.scopus.com/inward/record.url?scp=84941023587&partnerID=8YFLogxK

U2 - 10.1002/adma.201502758

DO - 10.1002/adma.201502758

M3 - Article

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SP - 5028

EP - 5033

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 34

ER -

Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

Abstract

Keywords

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