This paper reports the resistive switching and synaptic capability of AZO/ZnO/ITO transparent and flexiblevalence change memory device structure. The device performs stable endurance for more than 50 cycles with sufficient ON/OFF ratio of one order of magnitude; no intermediate state (data error) is observed during the cycle-to-cycle test. By exploiting the analog switching characteristic of the device and employing identical pulses to the top electrode, a synaptic behavior can be achieved. A low programming voltage of 1.5V is used to modulate the conductance during potentiation and depression which indicate that the device is a logic-compatible. The conduction mechanism during the switching processand the device performance is discussed.
|Journal||IOP Conference Series: Materials Science and Engineering|
|State||Published - 29 Mar 2019|
|Event||International Conference on Mechanical Engineering Research and Application 2018, ICOMERA 2018 - Malang, Indonesia|
Duration: 23 Oct 2018 → 25 Oct 2018