Switched Low-Noise Amplifier Using Gyrator-Based Matching Network for TD-LTE/LTE-U/Mid-Band 5G and WLAN Applications

Ching Han Tsai*, Chun Yi Lin, Ching Piao Liang, Shyh Jong Chung, Jenn-Hwan Tarng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a triple-band low-noise amplifier (LNA) fabricated using a 0.18 m Complementary Metal-Oxide-Semiconductor (CMOS) process. The LNA uses a double-peak load network with a switched component to accomplish the triple-band operation. Moreover, noise reduction using a substrate resistor to ameliorate the noise performance is presented. Noise reduction of 1.5 dB can be achieved at 2.5 GHz without additional dc power and extra manufacturing costs. An input matching technique is realized simultaneously using a gyrator-based feedback topology. The triple-band LNA can be realized by using a dual-band input network with a switched matching mechanism. The target frequencies of the triple-band LNA are 2.3-2.7 GHz, 3.4-3.8 GHz, and 5.1-5.9 GHz, covering the operating frequency bands of time-division long-term evolution (TDLTE), mid-band Fifth-generation (5G), LTE-unlicensed (LTE-U) band, andWireless LAN (WLAN) technology. The measured power gains and noise figures at 2.5, 3.5, and 5.2 GHz are 12.3, 15.3, and 13.1 dB and 2.3, 2.2, and 2.6 dB, respectively.

Original languageEnglish
Article number1477
Pages (from-to)1-13
Number of pages13
JournalApplied Sciences (Switzerland)
Volume11
Issue number4
DOIs
StatePublished - Feb 2021

Keywords

  • 5G
  • Low-noise amplifier
  • Noise reduction
  • Triple-band

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