Susceptor coupling for the uniformity and dopant activation efficiency in implanted Si under fixed-frequency microwave anneal

Yao Jen Lee*, Fu Kuo Hsueh, Michael I. Current, Ching Yi Wu, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However, during conventional fixed-frequency microwave heating, standing wave patterns can be established in the microwave processing chamber, resulting in nodes and antinodes over the processing area, resulting in thermal variations over the process wafer. In this letter, the effects of Si or quartz susceptor wafers on dopant activation and sheet resistance uniformity during fixed-frequency microwave anneal are studied. The composition, number, and spacing of susceptor wafers were varied in a systematic fashion in these experiments.

Original languageEnglish
Article number6105514
Pages (from-to)248-250
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number2
DOIs
StatePublished - 1 Feb 2012

Keywords

  • Coupling effect
  • low temperature
  • microwave anneal
  • phosphorus
  • quartz

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