In this study, we have fabricated OTFTs using poly-3-hexylthiophene (P3HT) as an active layer and SiO2 as gate dielectric layer which was modified by the atmospheric-pressure plasma technology (APPT). Processes of APPT are below 120°C and at atmospheric pressure. The effects of surface treatment of SiO2 on electric characteristics of OTFTs were investigated. After surface treatment, the field-effect transistor has a threshold voltage within -10V and a field-effect mobility of 0.02-0.03 cm 2/Vs which was 15-fold improvement over the mobility on bare silicon oxide. This study suggests an interesting direction for preparation of high-performance OTFTs with high efficiency and low temperature of surface treatment process by APPT.
|Title of host publication||ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT|
|Number of pages||6|
|State||Published - 1 Dec 2007|
|Event||2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT - Barga, Italy|
Duration: 29 Jul 2007 → 3 Aug 2007
|Conference||2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT|
|Period||29/07/07 → 3/08/07|