Surface-treatment effects on organic thin-film transistors by atmospheric-pressure plasma technology

Kow-Ming Chang*, Chih Hsiang Lin, Shih Syuan Huang, Chun Long Su

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we have fabricated OTFTs using poly-3-hexylthiophene (P3HT) as an active layer and SiO2 as gate dielectric layer which was modified by the atmospheric-pressure plasma technology (APPT). Processes of APPT are below 120°C and at atmospheric pressure. The effects of surface treatment of SiO2 on electric characteristics of OTFTs were investigated. After surface treatment, the field-effect transistor has a threshold voltage within -10V and a field-effect mobility of 0.02-0.03 cm 2/Vs which was 15-fold improvement over the mobility on bare silicon oxide. This study suggests an interesting direction for preparation of high-performance OTFTs with high efficiency and low temperature of surface treatment process by APPT.

Original languageEnglish
Title of host publicationECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT
Pages205-210
Number of pages6
Edition1
DOIs
StatePublished - 1 Dec 2007
Event2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT - Barga, Italy
Duration: 29 Jul 20073 Aug 2007

Publication series

NameECS Transactions
Number1
Volume8
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
CountryItaly
CityBarga
Period29/07/073/08/07

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  • Cite this

    Chang, K-M., Lin, C. H., Huang, S. S., & Su, C. L. (2007). Surface-treatment effects on organic thin-film transistors by atmospheric-pressure plasma technology. In ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT (1 ed., pp. 205-210). (ECS Transactions; Vol. 8, No. 1). https://doi.org/10.1149/1.2767309