Surface texturing for wafer-bonded vertical-type GaN/mirror/Si light-emitting diodes

Shao Hua Huang, Ray-Hua Horng*, Shun Cheng Hsu, Tsung Yu Chen, Dong Sing Wuu

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Scopus citations


An n-side-up GaN/mirror(Pd/Au)/Si light-emitting diode (LED) with surface texturing has been fabricated by a combination of wafer-bonding, laser lift-off, and surface texturing techniques. Two concentrations of KOH solution were used to roughen the n-GaN surface. In order to obtain a uniformly roughened surface, the solution was heated instead of being subjected to photoirradiation. The GaN/Pd/Au/Si LEDs with surface texturing exhibited a maximum luminance intensity of 130mcd (at 20 mA) with a forward voltage of 3.2 V. The luminance intensity is over two times larger than that of the original planar GaN/ sapphire LEDs (at 20mA). Under high current injection, the surface textured GaN/Pd/Au/Si LEDs also showed a more stable luminance intensity. This feature is attributed to the Si substrate providing a good heat sink and surface roughening enhancing the external quantum efficiency. Furthermore, the n-side-up GaN/mirror(Pd/Au)/Si LEDs with surface texturing have been demonstrated to have high reliability.

Original languageEnglish
Pages (from-to)3028-3031
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number5 A
StatePublished - 1 May 2005


  • GaN
  • Laser lift-off
  • Light-emitting diode (LED)
  • Surface texturing
  • Wafer bonding

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