Surface states related the bias stability of amorphous In-Ga-Zn-O thin film transistors under different ambient gasses

Yu Chun Chen, Ting Chang Chang*, Hung Wei Li, Shih Cheng Chen, Wan Fang Chung, Yi Hsien Chen, Ya-Hsiang Tai, Tseung-Yuen Tseng, Fon Shan Yeh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

This paper investigates the origin of the bias stability under ambient gas (oxygen, moisture and vacuum) of In-Ga-Zn-O thin film transistors with different annealing temperatures. In Zn-based TFTs, the electrical characteristic of device is a strongly function with the ambient gas, the simultaneous gas ambient and bias stresses are applied on devices annealed in atmosphere ambient to study this issue. The result shows the device which is annealed at temperature up to 330 °C has worst reliability. We suppose that the sensitivity of gas ambient depend the defect state, which is associated to the annealing temperature, of surface in a-IGZO.

Original languageEnglish
Pages (from-to)1432-1436
Number of pages5
JournalThin Solid Films
Volume520
Issue number5
DOIs
StatePublished - 30 Dec 2011

Keywords

  • Gate bias stress
  • Indium gallium zinc oxide
  • Thin film transistors

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