Surface roughness control by energy shift in deep X-ray lithography

Y. Cheng*, C. N. Chen, C. C. Chieng, F. G. Tseng, Jeng-Tzong Sheu

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Previous studies show that the surface roughness of the sidewall generated by deep X-ray lithography (DXL) is a function of the photon energy of X-rays. Present study demonstrates and reveals the ideas of controlling surface roughness by tuning irradiation photon energy on the sidewall using the developing temperature. The ideas are resulted from two observations (1) X-rays of higher energy induce photoelectrons of higher energy in the resist and the corresponding scattering distance is nearly a square function of electron energy [1], and (2) high-energy X-rays are expected to induce more surface roughness and this effect has been observed by different laboratory [2].

Original languageEnglish
Pages (from-to)163-166
Number of pages4
JournalMicrosystem Technologies
Volume9
Issue number3
DOIs
StatePublished - 1 Jan 2003

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