Surface recombination dependent performance of a nano-scale p-n junction solar cell

Hung Ruei Tseng, Shun Chieh Hsu, Shih Li Lin, Yin Han Chen, Chien-Chung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A nano-scale p-n junction diode is set up for photovoltaic response simulation, and the codes are based on Matlab® environment. The continuity and transport equations for electrons and holes are installed in the program and proper boundary conditions are used. The surface recombination velocity is found to be an influential parameter for the short-circuit current under regular AM1.5 solar excitation. From the simulation, a 35% degradation on Jsc can be expected in the nano-scale device when the surface recombination velocity increases from almost zero to 107 m/s. Meanwhile the reduction of the minority carrier lifetime is not as detrimental as the surface recombination towards the nano-scale photovoltaic device.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1106-1109
Number of pages4
ISBN (Electronic)9781479943982
DOIs
StatePublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period8/06/1413/06/14

Keywords

  • Nano-scale Devices
  • Numerical Simulation
  • Photovoltaic Devices
  • Solar Cells
  • Surface Recombination

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