Surface recombination dependent performance of a nano-scale p-n junction solar cell

Hung Ruei Tseng; Shun Chieh Hsu; Shih Li Lin; Yin Han Chen; Chien-Chung Lin

doi:10.1109/PVSC.2014.6925109

Surface recombination dependent performance of a nano-scale p-n junction solar cell

Hung Ruei Tseng, Shun Chieh Hsu, Shih Li Lin, Yin Han Chen, Chien-Chung Lin

Institute of Photonic System

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

A nano-scale p-n junction diode is set up for photovoltaic response simulation, and the codes are based on Matlab® environment. The continuity and transport equations for electrons and holes are installed in the program and proper boundary conditions are used. The surface recombination velocity is found to be an influential parameter for the short-circuit current under regular AM1.5 solar excitation. From the simulation, a 35% degradation on J_sc can be expected in the nano-scale device when the surface recombination velocity increases from almost zero to 10⁷ m/s. Meanwhile the reduction of the minority carrier lifetime is not as detrimental as the surface recombination towards the nano-scale photovoltaic device.

Original language	English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1106-1109
Number of pages	4
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925109
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country	United States
City	Denver
Period	8/06/14 → 13/06/14

Keywords

Nano-scale Devices
Numerical Simulation
Photovoltaic Devices
Solar Cells
Surface Recombination

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

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10.1109/PVSC.2014.6925109

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Tseng, H. R., Hsu, S. C., Lin, S. L., Chen, Y. H., & Lin, C-C. (2014). Surface recombination dependent performance of a nano-scale p-n junction solar cell. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 1106-1109). [6925109] (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925109

Tseng, Hung Ruei ; Hsu, Shun Chieh ; Lin, Shih Li ; Chen, Yin Han ; Lin, Chien-Chung. / Surface recombination dependent performance of a nano-scale p-n junction solar cell. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 1106-1109 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

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title = "Surface recombination dependent performance of a nano-scale p-n junction solar cell",

abstract = "A nano-scale p-n junction diode is set up for photovoltaic response simulation, and the codes are based on Matlab{\textregistered} environment. The continuity and transport equations for electrons and holes are installed in the program and proper boundary conditions are used. The surface recombination velocity is found to be an influential parameter for the short-circuit current under regular AM1.5 solar excitation. From the simulation, a 35% degradation on Jsc can be expected in the nano-scale device when the surface recombination velocity increases from almost zero to 107 m/s. Meanwhile the reduction of the minority carrier lifetime is not as detrimental as the surface recombination towards the nano-scale photovoltaic device.",

keywords = "Nano-scale Devices, Numerical Simulation, Photovoltaic Devices, Solar Cells, Surface Recombination",

author = "Tseng, {Hung Ruei} and Hsu, {Shun Chieh} and Lin, {Shih Li} and Chen, {Yin Han} and Chien-Chung Lin",

year = "2014",

month = oct,

day = "15",

doi = "10.1109/PVSC.2014.6925109",

language = "English",

series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1106--1109",

booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

address = "United States",

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Tseng, HR, Hsu, SC, Lin, SL, Chen, YH & Lin, C-C 2014, Surface recombination dependent performance of a nano-scale p-n junction solar cell. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925109, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 1106-1109, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14. https://doi.org/10.1109/PVSC.2014.6925109

Surface recombination dependent performance of a nano-scale p-n junction solar cell. / Tseng, Hung Ruei; Hsu, Shun Chieh; Lin, Shih Li; Chen, Yin Han; Lin, Chien-Chung.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1106-1109 6925109 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Surface recombination dependent performance of a nano-scale p-n junction solar cell

AU - Tseng, Hung Ruei

AU - Hsu, Shun Chieh

AU - Lin, Shih Li

AU - Chen, Yin Han

AU - Lin, Chien-Chung

PY - 2014/10/15

Y1 - 2014/10/15

N2 - A nano-scale p-n junction diode is set up for photovoltaic response simulation, and the codes are based on Matlab® environment. The continuity and transport equations for electrons and holes are installed in the program and proper boundary conditions are used. The surface recombination velocity is found to be an influential parameter for the short-circuit current under regular AM1.5 solar excitation. From the simulation, a 35% degradation on Jsc can be expected in the nano-scale device when the surface recombination velocity increases from almost zero to 107 m/s. Meanwhile the reduction of the minority carrier lifetime is not as detrimental as the surface recombination towards the nano-scale photovoltaic device.

AB - A nano-scale p-n junction diode is set up for photovoltaic response simulation, and the codes are based on Matlab® environment. The continuity and transport equations for electrons and holes are installed in the program and proper boundary conditions are used. The surface recombination velocity is found to be an influential parameter for the short-circuit current under regular AM1.5 solar excitation. From the simulation, a 35% degradation on Jsc can be expected in the nano-scale device when the surface recombination velocity increases from almost zero to 107 m/s. Meanwhile the reduction of the minority carrier lifetime is not as detrimental as the surface recombination towards the nano-scale photovoltaic device.

KW - Nano-scale Devices

KW - Numerical Simulation

KW - Photovoltaic Devices

KW - Solar Cells

KW - Surface Recombination

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T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

SP - 1106

EP - 1109

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Tseng HR, Hsu SC, Lin SL, Chen YH, Lin C-C. Surface recombination dependent performance of a nano-scale p-n junction solar cell. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1106-1109. 6925109. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). https://doi.org/10.1109/PVSC.2014.6925109

Surface recombination dependent performance of a nano-scale p-n junction solar cell

Abstract

Publication series

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Keywords

UN SDGs

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