Surface reaction of bis(tertbutylimido)bis(diethylamido)tungsten precursor on Si(100)-(2×1)

Jin Bao Wu, Yaw Wen Yang*, Yi Feng Lin, Hsin-Tien Chiu

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The thermal decomposition of a metal-organic chemical vapor deposition precursor, bis(terbutylimido)bis(diethylamido)tungsten on Si was discussed. It was found that the resultant thin film consisted of tungsten metal, silicon carbides and silicon nitrides. The analysis showed that the transmetalation of the precursor lead to tungsten metal adsorption on Si.

Original languageEnglish
Pages (from-to)1620-1624
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume21
Issue number5
DOIs
StatePublished - 1 Sep 2003

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