The thermal decomposition of a metal-organic chemical vapor deposition precursor, bis(terbutylimido)bis(diethylamido)tungsten on Si was discussed. It was found that the resultant thin film consisted of tungsten metal, silicon carbides and silicon nitrides. The analysis showed that the transmetalation of the precursor lead to tungsten metal adsorption on Si.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|State||Published - 1 Sep 2003|