Surface potential and electric field mapping of p-well/n-well junction by secondary electron potential contrast and in-situ nanoprobe biasing

Jeng Han Lee*, Po-Tsun Liu, M. H. Wang, Y. T. Lin, Y. S. Huan, David Su

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study investigates the p-well/n-well junction by using secondary electron potential contrast (SEPC) with in-situ nanoprobe biasing. Experimental result demonstrated dopant contrast is restored after applying electricity in the junction nodes. Furthermore, the image contrast was converted to a voltage scale, allowing the junction surface potential and electric filed distribution to be identified. The proposed method demonstrates that an in-situ nanoprobe system is powerful in dopant area inspection in SEM, potentially contributing to an efficient method in analyzing site-specific failure in real circuits.

Original languageEnglish
Title of host publication2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
DOIs
StatePublished - 19 Nov 2012
Event2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012 - Singapore, Singapore
Duration: 2 Jul 20126 Jul 2012

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
CountrySingapore
CitySingapore
Period2/07/126/07/12

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  • Cite this

    Lee, J. H., Liu, P-T., Wang, M. H., Lin, Y. T., Huan, Y. S., & Su, D. (2012). Surface potential and electric field mapping of p-well/n-well junction by secondary electron potential contrast and in-situ nanoprobe biasing. In 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012 [6306277] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2012.6306277