Surface passivation of GaAs power FETs

Tsuyoshi Tanaka*, Hidetoshi Furukawa, Kazuo Miyatsuji, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The surface passivation of GaAs power FET has been investigated. Intermodulation distortion of GaAs power FET was found to be affected by frequency dispersion which originates from electron trap at the surface in the vicinity of the gate. There are two ways to suppress the frequency dispersion. One is reducing electron trap itself by using surface passivation, the other is making surface insensitive to the surface trapping effect. We found the FET with undoped InGaP layers on the n-GaAs channel is free from surface trapping effects. The undoped InGaP layer acts as an ideal passivation layer for the channel, since it shows only 2% frequency dispersion of drain current at 1MHz compared to DC condition.

Original languageEnglish
Pages (from-to)239-245
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Volume573
DOIs
StatePublished - 1 Dec 1999

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