Surface passivation effect on SGOI nanowire biosensor in high GE fraction fabrication

Kow-Ming Chang, Chu Feng Chen, Chiung Hui Lai, Cheng Ting Hsieh, Chin Ning Wu, Yu Bin Wang, Chung Hsien Liu, Kuo Chin Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The oxidation of an SiGe-on-Insulator (SGOI) that is caused by Ge condensation increases the fraction of Ge therein and significantly increases the hole mobility. This effect can be exploited to improve the sensitivity of SGOI nano-wires. However, previous investigations by the authors have revealed that the sensitivity of SGOI nano-wires is reduced when the Ge fraction increase over 20%, because a high Ge fraction destabilizes the surface state of SiGe. In this work, a top surface passivation PECVD SiO2 layer that was deposited on a Si0.8Ge0.2 nano-wire improved its sensitivity to approximately 1.3 times that of a nano-wire sample without a top passivation layer.

Original languageEnglish
Title of host publicationNano/Bio Sensors
Pages15-26
Number of pages12
Edition15
DOIs
StatePublished - 22 Oct 2013
EventSymposium on Nano/Bio Sensors - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number15
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Nano/Bio Sensors - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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