Surface modification of YBa 2 Cu 3 O y thin films with a scanning tunneling microscope

Sufen Chen; L. M. Wang; Wen-Bin Jian; S. Y. Wang; H. C. Yang; H. E. Horng

doi:10.1063/1.357566

Surface modification of YBa ₂ Cu ₃ O _y thin films with a scanning tunneling microscope

Sufen Chen^*, L. M. Wang, Wen-Bin Jian, S. Y. Wang, H. C. Yang, H. E. Horng

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report a systematic modification of thin YBa ₂ Cu ₃ O _y films with a scanning tunneling microscope. The samples include YBa ₂ Cu ₃ O _y films on MgO(001) and YBa ₂ Cu ₃ O _y /PrBa ₂ Cu ₃ O _y bilayer films on SrTiO ₃ (001). The bias voltage of the tip was kept negative and varied from -600 to -1200 mV. The tip was operated in a constant tunneling current mode with tunneling current 0.3-0.7 nA and scanning rate 1 Hz. Modification of the surface begins with nucleation of holes, or at the edge of a dislocation or protrusion on the surface, and is achieved by successively scanning a fixed area. We show the image obtained from an atomic force microscope which can help us look into the mechanism of the modification.

Original language	English
Pages (from-to)	2535-2537
Number of pages	3
Journal	Journal of Applied Physics
Volume	76
Issue number	4
DOIs	https://doi.org/10.1063/1.357566
State	Published - 1 Dec 1994

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title = "Surface modification of YBa 2 Cu 3 O y thin films with a scanning tunneling microscope",

abstract = " We report a systematic modification of thin YBa 2 Cu 3 O y films with a scanning tunneling microscope. The samples include YBa 2 Cu 3 O y films on MgO(001) and YBa 2 Cu 3 O y /PrBa 2 Cu 3 O y bilayer films on SrTiO 3 (001). The bias voltage of the tip was kept negative and varied from -600 to -1200 mV. The tip was operated in a constant tunneling current mode with tunneling current 0.3-0.7 nA and scanning rate 1 Hz. Modification of the surface begins with nucleation of holes, or at the edge of a dislocation or protrusion on the surface, and is achieved by successively scanning a fixed area. We show the image obtained from an atomic force microscope which can help us look into the mechanism of the modification. ",

author = "Sufen Chen and Wang, {L. M.} and Wen-Bin Jian and Wang, {S. Y.} and Yang, {H. C.} and Horng, {H. E.}",

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T1 - Surface modification of YBa 2 Cu 3 O y thin films with a scanning tunneling microscope

AU - Chen, Sufen

AU - Wang, L. M.

AU - Jian, Wen-Bin

AU - Wang, S. Y.

AU - Yang, H. C.

AU - Horng, H. E.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We report a systematic modification of thin YBa 2 Cu 3 O y films with a scanning tunneling microscope. The samples include YBa 2 Cu 3 O y films on MgO(001) and YBa 2 Cu 3 O y /PrBa 2 Cu 3 O y bilayer films on SrTiO 3 (001). The bias voltage of the tip was kept negative and varied from -600 to -1200 mV. The tip was operated in a constant tunneling current mode with tunneling current 0.3-0.7 nA and scanning rate 1 Hz. Modification of the surface begins with nucleation of holes, or at the edge of a dislocation or protrusion on the surface, and is achieved by successively scanning a fixed area. We show the image obtained from an atomic force microscope which can help us look into the mechanism of the modification.

AB - We report a systematic modification of thin YBa 2 Cu 3 O y films with a scanning tunneling microscope. The samples include YBa 2 Cu 3 O y films on MgO(001) and YBa 2 Cu 3 O y /PrBa 2 Cu 3 O y bilayer films on SrTiO 3 (001). The bias voltage of the tip was kept negative and varied from -600 to -1200 mV. The tip was operated in a constant tunneling current mode with tunneling current 0.3-0.7 nA and scanning rate 1 Hz. Modification of the surface begins with nucleation of holes, or at the edge of a dislocation or protrusion on the surface, and is achieved by successively scanning a fixed area. We show the image obtained from an atomic force microscope which can help us look into the mechanism of the modification.

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