Surface micromachined miniature switch for telecommunications applications with signal frequencies from DC up to 4 GHZ

Jason J. Yao*, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

236 Scopus citations

Abstract

A surface micromachined miniature switch has been made on a semi-insulating GaAs substrate using a suspended silicon dioxide micro-beam as the cantilevered arm, a platinum-to-gold electrical contact, and electrostatic actuation as the switching mechanism. This switch functions from DC to RF frequency, and has an electrical isolation of -50 dB and an insertion loss of 0.1 dB at 4 GHz. The low process temperature budget of 250°C ensures the switch's monolithic integration capability with microwave and millimeter wave integrated circuits.

Original languageEnglish
Pages384-387
Number of pages4
StatePublished - 1 Dec 1995
EventProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden
Duration: 25 Jun 199529 Jun 1995

Conference

ConferenceProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)
CityStockholm, Sweden
Period25/06/9529/06/95

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