A surface micromachined miniature switch has been made on a semi-insulating GaAs substrate using a suspended silicon dioxide micro-beam as the cantilevered arm, a platinum-to-gold electrical contact, and electrostatic actuation as the switching mechanism. This switch functions from DC to RF frequency, and has an electrical isolation of -50 dB and an insertion loss of 0.1 dB at 4 GHz. The low process temperature budget of 250°C ensures the switch's monolithic integration capability with microwave and millimeter wave integrated circuits.
|Number of pages||4|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden|
Duration: 25 Jun 1995 → 29 Jun 1995
|Conference||Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)|
|Period||25/06/95 → 29/06/95|