Surface deposition of diethyl phthalate on siO2 and Si3N4 wafers in simulated cleanroom environment

Yuhao Kang*, Walter Den, Hsun-Ling Bai, Fu-Hsiang Ko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The surface deposition kinetics of airborne diethyl phthalate (DEP), a representative compound for high-boiling-point organic contaminants in cleanroom environments, were investigated in this study. Between the two types of wafer surfaces evaluated, wafer surfaces with oxide (SiO2) and wafer surfaces with nitride (Si3N4), DEP exhibited a stronger propensity to absorb on the SiO2 wafers, presumably due to the greater dipole moment between DEP and SiO2 surfaces. Under well-controlled exposure conditions, the rate parameters of a theoretical surface kinetic model were determined by employing a heuristic algorithm for numerical optimization to match the experimental profile. Subsequently, a series of time-dependent surface DEP concentrations were simulated and validated with the experimental data under various ambient concentrations. Estimation of the allowable wafer exposure durations and the maximum ambient concentrations were exemplified based on the guideline recommended by the International Technology Roadmap for Semiconductors (ITRS).1.

Original languageEnglish
Pages (from-to)21-32
Number of pages12
JournalJournal of the IEST
Volume48
Issue number1
DOIs
StatePublished - 1 Jan 2005

Keywords

  • Airborne molecular contamination
  • Cleanroom
  • Deposition kinetics
  • Deposition velocity
  • Diethyl phthalate (DEP)
  • Sticking coefficient
  • Surface deposition

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