Suppression of the SOI floating-body effects by linked-body device structure

W. Chen*, Y. Taur, D. Sadana, K. A. Jenkins, J. Sun, S. Cohen

*Corresponding author for this work

Research output: Contribution to journalConference article

23 Scopus citations

Abstract

A novel 'Linked-body' SOI-CMOS device structure is presented. This structure suppresses the unwanted SOI floating-body effects, yet retaining all the speed advantage of SOI devices. It has much better short-channel effect and very low off-state current compared with regular SOI devices for digital applications, and has no 'kink' in the I-V curves for analog applications. Excellent ring oscillator performance, improved breakdown characteristics, and absence of transient drain-current overshoot are demonstrated in linked-body SOI devices.

Original languageEnglish
Pages (from-to)92-93
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1996
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 11 Jun 199613 Jun 1996

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