Suppression of photo-bias instability of transparent amorphous indium oxide thin film transistors by in situ nitrogen doping

Chih Hsiang Chang, Po-Tsun Liu, Yun Chu Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, we analyzed the In 2 O 3 thin films with different nitrogen flow rate during sputtering as the transistor's channel layer. The electrical analysis including device's reliability and material analysis were both examined.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages623-625
Number of pages3
ISBN (Electronic)9781510845503
StatePublished - 1 Jan 2015
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 9 Dec 201511 Dec 2015

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference22nd International Display Workshops, IDW 2015
CountryJapan
CityOtsu
Period9/12/1511/12/15

Keywords

  • Indium oxide
  • Nitrogen
  • Thin-film transistors

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