Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

Po-Tsun Liu*, Chih Hsiang Chang, Chih Jui Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO 2 backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

Original languageEnglish
Article number261603
Number of pages4
JournalApplied Physics Letters
Volume108
Issue number26
DOIs
StatePublished - 27 Jun 2016

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