Suppression of partition noise in infrared hot-electron transistors

C. H. Kuan*, K. K. Choi, W. H. Chang, C. W. Farley, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The noise properties of hot electrons in three different infrared hot-electron transistors have been characterized. We observed that there is a reduction of generation-recombination noise after the hot electrons passed through the built-in electron energy filters. The magnitude of the reduction depends on the band structure of the filters, and can be attributed to the lack of partition noise associated with the quantum transport of the hot electrons. Based on this observation, low noise infrared hot-electron transistors can be designed using appropriate filters.

Original languageEnglish
Pages (from-to)238-240
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number2
DOIs
StatePublished - 1 Dec 1994

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