Suppression of lateral encroachment of Ni suicide into Si nanowires using nitrogen incorporation

N. Shigemori*, S. Sato, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Lateral encroachment phenomenon has been analyzed when full silicidation of Si nanowire has been performed [1]. Suppression of this phenomenon was accomplished by the nitrogen incorporation in Ni films prior to the silicidation. It has been revealed that the suppression effect for this method has come from thin Si nitride layer formed at Ni/Si interface during the Ni deposition in nitrogen containing atmosphere and its retardation of excessive silicidation.

Original languageEnglish
Title of host publicationSolid State Topics (General) - 218th ECS Meeting
Pages19-26
Number of pages8
Edition31
DOIs
StatePublished - 2011
EventSolid State Topics General Session - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 10 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number31
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSolid State Topics General Session - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1015/10/10

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    Shigemori, N., Sato, S., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2011). Suppression of lateral encroachment of Ni suicide into Si nanowires using nitrogen incorporation. In Solid State Topics (General) - 218th ECS Meeting (31 ed., pp. 19-26). (ECS Transactions; Vol. 33, No. 31). https://doi.org/10.1149/1.3567399