Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure

Shin Yi Ho, Chun Hsun Lee, An Jye Tzou, Hao-Chung Kuo, Yuh Renn Wu, Jian Jang Huang

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Current collapse is a phenomenon that increases the channel resistance during the switching process when the high gate and drain voltages are applied. The effect can be found from GaN-based high-electron mobility transistors (HEMTs) and is an obstacle for their applications to power electronics. There have been numerous reports on suppressing current collapse using semiconductor process technologies. In this paper, an enhancement mode (E-mode) AlGaN/GaN/AlGaN double heterostructure was proposed. The current collapse phenomena were studied on devices of E-mode MIS and Schottky gate HEMTs. The results indicate the suppression of current collapse for devices with double heterostructure.

Original languageEnglish
Article number7873300
Pages (from-to)1505-1510
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume64
Issue number4
DOIs
StatePublished - 1 Apr 2017

Keywords

  • Current collapse
  • enhancement mode (E-mode)
  • GaN
  • High-electron mobility transistor (HEMT)

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