Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatment

Kow-Ming Chang, I. Chung Deng, Sy Jer Yeh, Yao Pin Tsai

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A low dielectric constant material, hydrogen silsesquioxane (FOx-16), can successfully suppress Cu diffusion without barrier metal by using NH3 plasma treatment. After NH3 plasma treatment, the hydrogen silsesquioxane film with lower leakage current and better barrier ability was achieved. This film almost keeps the same dielectric constant after different plasma exposure times. The decrease in leakage current with more exposure time is due to dangling bonds passivated by -H bonds on porous hydrogen silsesquioxane. The better barrier ability is due to a thin nitride film formed on the dielectric.

Original languageEnglish
Pages (from-to)634-636
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume2
Issue number12
DOIs
StatePublished - 1 Dec 1999

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