Suppression of boron penetration in P+-Poly-SiGe Gate P-channel metal-oxide-semiconductor field-effect transistor using NH3-Nitrided and N2O-grown gate oxides

Wen Luh Yang, Tien-Sheng Chao*, Kuan Hung Lai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Fingerprint Dive into the research topics of 'Suppression of boron penetration in P<sup>+</sup>-Poly-SiGe Gate P-channel metal-oxide-semiconductor field-effect transistor using NH<sub>3</sub>-Nitrided and N<sub>2</sub>O-grown gate oxides'. Together they form a unique fingerprint.

Physics & Astronomy

Engineering & Materials Science