Suppression of boron penetration in P+-Poly-SiGe Gate P-channel metal-oxide-semiconductor field-effect transistor using NH3-Nitrided and N2O-grown gate oxides

Wen Luh Yang, Tien-Sheng Chao*, Kuan Hung Lai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

High-performance p+-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide instead of the conventional O2-grown oxide. It is found that NH 3-nitrided or N2O-grown oxide can suppress boron penetration in the p+-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.

Original languageEnglish
Pages (from-to)7462-7463
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number11 A
DOIs
StatePublished - 1 Nov 2004

Keywords

  • Boron penetration
  • Flat-band voltage shift
  • NO
  • NH
  • Poly-SiGe

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