Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation

Tien-Sheng Chao*, Chao-Hsin Chien, C. P. Hao, M. C. Liaw, C. H. Chu, C. Y. Chang, T. F. Lei, W. T. Sun, C. H. Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p+- poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-X complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.

Original languageEnglish
Pages (from-to)1364-1367
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number3 SUPPL. B
StatePublished - 1 Mar 1997


  • Boron penetration
  • Nitrogen
  • X-ray photoelectron spectroscopy

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