Suppression of boron penetration in pmos by using oxide gettering effect in poly-si gate

Yung Hao Lin, Chung Len Lee, Tan Fu Lei, Tien-Sheng Chao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A new stacked poly-Si gate structure with a thin (~20 Å) oxide inserted in-between for p-channel metal-oxide semiconductor feild effect transistor (pMOSFET) application is proposed and demonstrated. Due to the gettering fluorine effect of this thin oxide for BF(FORMULA PRESENTED) implanted poly-Si gate, the amount of fluorine in the gate oxide, consequently, the boron penetration enhanced by fluorine are reduced. The thicker or the more apart from the gate oxide of this gettering fluorine oxide is, the more effectively it can suppress the boron penetration. Moreover, this new structure improves more the electrical characteristics than the conventional and the stacked layer poly silicon gate structures.

Original languageEnglish
Pages (from-to)752-756
Number of pages5
JournalJapanese Journal of Applied Physics
Volume34
Issue number2S
DOIs
StatePublished - 1 Jan 1995

Keywords

  • BF(FORMULA PRESENTED) implantation
  • Boron penetration
  • Oxide gettering fluorine effect
  • PMOS
  • Stacked poly-Si gate

Fingerprint Dive into the research topics of 'Suppression of boron penetration in pmos by using oxide gettering effect in poly-si gate'. Together they form a unique fingerprint.

Cite this