Suppression of boron penetration in BF 2 + -implanted poly-Si gate

Tien-Sheng Chao*, Chih Hsun Chu, Chuan Fu Wang, H. O. Kuai Junz, Tan Fu Lei, Chung Len Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this paper, a comprehensive study of gate engineering to suppress the penetration of boron in p-type metaloxide-semiconductor field-effect transistor (MOSFET) with the p + -poly-Si-gate is reported. Four types of poly-Si gate structure, two types of gate dielectrics were investigated to suppress the boron penetration. Among the different gate structures, the stacked amorphous silicon structure was found to be the most effective way to retard the boron penetration. N 2 O oxide exhibited a better retarding of the boron diffusion as compared with the O 2 oxide. It was found that a combination of stacked amorphous silicon with N 2 O oxide is the most effective way to suppress the boron penetration. Thermal stability, oxide integrity, and D it of this sample are superior to all the other samples.

Original languageEnglish
Pages (from-to)6003-6007
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number12 A
StatePublished - 1 Dec 1996

Keywords

  • Boron
  • N O oxide
  • Penetration
  • Stack poly-Si

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