SUPPRESSION OF ANOMALOUS DRAIN CURRENT IN SHORT CHANNEL MOSFET.

Masami Konaka*, Hiroshi Iwai, Yoshio Nishi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The current voltage characteristics of short-channel nMOSFET in the subthreshold region are investigated by two-dimensional numerical analysis. Deep ion implantation of acceptor impurities beneath the channel is found to improve these characteristics. Structure optimization for the deeply ion-implanted short-channel MOSFET is carried out to obtain low subthreshold current with steep semilogarithmic slope, which is almost comparable with the long-channel MOSFET.

Original languageEnglish
Pages (from-to)27-33
Number of pages7
JournalJapanese Journal of Applied Physics
Volume18
DOIs
StatePublished - 1980
EventProc Conf Solid State Devices 10th - Tokyo, Jpn
Duration: 29 Aug 197830 Aug 1978

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