Suppression of anomalous diffusion of ion-implanted boron in silicon by laser processing

M. H. Juang*, F. S. Wan, H. W. Liu, K. L. Cheng, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Anomalous diffusion of ion-implanted boron in silicon has been suppressed by using the laser annealing (LA) technique. For the rapid thermal annealing process, the high-dosage boron implant significantly enhanced the anomalous diffusion of boron in Si largely due to increased density of interstitial clusters. The mechanism that electrically active dopants contribute to diffusion is confirmed. The dopant activation is primarily determined from the heating process rather than the holding time interval. Hence, the optimum annealing regime, attaining high-performance shallow p+-n junctions, is to increase the dopant activation efficiency during the temperature-ramping process as well as to shorten the holding interval. Having an ultrahigh heating rate, the LA technique serves as an excellent annealing scheme to significantly suppress the anomalous diffusion and considerably promote the dopant activation.

Original languageEnglish
Pages (from-to)3628-3630
Number of pages3
JournalJournal of Applied Physics
Volume71
Issue number7
DOIs
StatePublished - 1 Dec 1992

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