Suppressing the initial growth of sidewall GaN by modifying micron-sized patterned sapphire substrate with H3PO4-based etchant

Wen Yang Hsu, Yuan Chi Lian, Pei Yu Wu, Wei Min Yong, Jinn Kong Sheu, Kun Lin Lin, Yew-Chuhg Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)-ex-situ AlN NL and in-situ GaN NL-were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

Original languageEnglish
Article number622
JournalMicromachines
Volume9
Issue number12
DOIs
StatePublished - 26 Nov 2018

Keywords

  • Growth of GaN
  • Micron-sized patterned sapphire substrate
  • Sidewall GaN

Fingerprint Dive into the research topics of 'Suppressing the initial growth of sidewall GaN by modifying micron-sized patterned sapphire substrate with H3PO4-based etchant'. Together they form a unique fingerprint.

Cite this