Suppressing phosphorus diffusion in germanium by carbon incorporation

G. Luo*, C. C. Cheng, C. Y. Huang, S. L. Hsu, Chao-Hsin Chien, W. X. Ni, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.

Original languageEnglish
Pages (from-to)1354-1355
Number of pages2
JournalElectronics Letters
Volume41
Issue number24
DOIs
StatePublished - 24 Nov 2005

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