Suppressing non-uniform tunneling in InAs/GaSb TFET with dual-metal gate

Ching Yi Hsu*, Chun Yen Chang, Edward Yi Chang, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

Non-uniformity in electric field causes early onset of tunneling near the edge of InAs/GaSb hetero-junction tunneling field-effect transistors. When a small area, often an edge, of the tunneling junction has a lower turn-on voltage, the steep switching characteristic is degraded. Fermi pinning at InAs surface greatly worsen the uniformity. We propose a dual-metal gate structure to address the nonuniformity issue. With proper choice of work functions, the dual-metal gate structure can effectively suppress the early onset of edge tunneling and significantly improve the subthreshold swing.

Original languageEnglish
Article number2514060
Pages (from-to)60-65
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Volume4
Issue number2
DOIs
StatePublished - 1 Mar 2016

Keywords

  • Dual-metal gate
  • Fermi pinning
  • InAs/GaSb
  • Nonuniformity
  • Quantum well
  • Steep turn-on
  • Surface states
  • Tunneling FET (TFET)

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