Suppressed Fin-LER induced variability in negative capacitance FinFETs

Ho Pei Lee*, Pin Su

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for Vt, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device with more severe short channel effect and vice versa, and explains the superior immunity to LER variation for the negative capacitance FinFETs.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages31-32
Number of pages2
ISBN (Electronic)9784863486478
DOIs
StatePublished - 29 Dec 2017
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 4 Jun 20175 Jun 2017

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume2017-January

Conference

Conference22nd Silicon Nanoelectronics Workshop, SNW 2017
CountryJapan
CityKyoto
Period4/06/175/06/17

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