@inproceedings{9af22185e4744d1590eda9273a9283b8,
title = "Suppressed Fin-LER induced variability in negative capacitance FinFETs",
abstract = "This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for Vt, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device with more severe short channel effect and vice versa, and explains the superior immunity to LER variation for the negative capacitance FinFETs.",
author = "Lee, {Ho Pei} and Pin Su",
year = "2017",
month = dec,
day = "29",
doi = "10.23919/SNW.2017.8242282",
language = "English",
series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "31--32",
booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
address = "United States",
note = "null ; Conference date: 04-06-2017 Through 05-06-2017",
}