Suppressed fin-ler induced variability in negative capacitance finfets

Ho Pei Lee, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


This letter investigates the impact of fin line-edge roughness (Fin-LER) on the intrinsic variation of negative capacitance FinFETs (NC-FinFETs) by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. We report a feedback mechanism stemming from the internal voltage amplification inherent in the negative capacitance FET. This feedback mechanism results in the superior immunity to Fin-LER-induced threshold-voltage and subthreshold-swing variations for NC-FinFETs as compared with the FinFET counterparts. This letter may provide insights for device/circuit designs using negative capacitance FETs.

Original languageEnglish
Article number8003472
Pages (from-to)1492-1495
Number of pages4
JournalIEEE Electron Device Letters
Issue number10
StatePublished - 1 Oct 2017


  • Fin-ler
  • Finfet
  • Negative capacitance
  • Variability

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