Suppress temperature instability of InGaZnO thin film transistors by N 2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress

Geng Wei Chang*, Ting Chang Chang, Jhe Ciou Jhu, Tsung Ming Tsai, Yong En Syu, Kuan Chang Chang, Ya-Hsiang Tai, Fu Yen Jian, Ya Chi Hung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

An abnormal subthreshold leakage current is observed at high temperature, which causes a notable stretch-out phenomenon in amorphous InGaZnO thin film transistors (a-IGZO TFTs). This is due to trap-induced thermal-generated holes accumulating at the source region, which leads to barrier lowering on the source side and causes an apparent subthreshold leakage current. In order to obtain superior thermal stability performance of a-IGZO TFTs, conducting N 2O plasma treatment on active layer was expected to avert defects generation during SiO 2 deposition process. Reducing defects generation not only suppresses subthreshold current stretch-out phenomenon but also significantly improves the bias stress stability in a-IGZO TFTs at high temperature.

Original languageEnglish
Article number182103
JournalApplied Physics Letters
Volume100
Issue number18
DOIs
StatePublished - 30 Apr 2012

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