Superthin O/N/O Stacked Dielectrics Formed by Oxidizing Thin Nitrides in Low Pressure Oxygen for High-Density Memory Devices

H. P. Su, Huang-Chung Cheng, G. Hong, H. W. Liu

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

High-performance superthin oxide/nitride/oxide (O/N/O) stacked dielectrics have been successfully achieved by oxidizing thin nitride films in low-pressure dry-oxygen at 850 °C for 30 min. Since the nitrides exhibit a better oxidation resistance to the low-pressure dry-oxygen than to the atmospheric-pressure dry-oxygen and wet-oxygen, the low pressure oxidation obtains a thinner oxidized nitride for the high-density dynamic-random-access-memories (DRAM's) and metal-oxide-nitride-oxide-semiconductor (MONO‘S) memory devices. In addition, this dielectric possesses low leakage current and excellent time-dependent-dielectric-breakdown (TDDB) characteristics. Therefore, this novel recipe is promising for future ULSI technology.

Original languageEnglish
Pages (from-to)440-442
Number of pages3
JournalIEEE Electron Device Letters
Volume15
Issue number11
DOIs
StatePublished - 1 Jan 1994

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