Superior resistive switching characteristics of Cu-TiO2 based RRAM cell

Yu-Chih Huang*, Huan Min Lin, Huang-Chung Cheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The random access memory (RRAM) cells consisted with the Cu doped TiO 2 film and both Pt inert electrodes has been purposed. Compared with the common conductive-bridging mode sample structure which have a Cu active electrode, a non-doped TiO2 film and a Pt inert electrode. The Cu doped film with both inert electrodes sample exhibited the endurance of 1000 cycles more than the common ones of 400 cycles under the same operating conditions. Furthermore, the doped sample required lower setting voltage of-0.7V than the common ones of-1.5V. The differences in resistance resistive switching characteristics were possible caused by the amounts of Cu ions distribution and the forming of the conductive filaments in the TiO2 layers, according the results of the electrical characteristics measurements and the material analysis.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages236-239
Number of pages4
DOIs
StatePublished - 13 Mar 2013
Event2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore
Duration: 2 Jan 20134 Jan 2013

Publication series

NameProceedings - Winter Simulation Conference
ISSN (Print)0891-7736

Conference

Conference2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
CountrySingapore
CitySingapore
Period2/01/134/01/13

Fingerprint Dive into the research topics of 'Superior resistive switching characteristics of Cu-TiO2 based RRAM cell'. Together they form a unique fingerprint.

Cite this