Superior Low-Pressure-Oxidized Si3N4 Films on Rapid-Thermal-Nitrided Poly-Si for High-Density DRAM's

Huang-Chung Cheng, H. W. Liu, H. P. Su, G. Hong

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

High-performance stacked storage capacitors with small effective-oxide-thickness (tox, eff) as thin as 37 Å has been achieved using low-pressure-oxidized nitride films deposited on NH3-nitrided poly-Si electrodes. The capacitors exhibit excellent leakage property and time-dependent-dielectric-breakdown (TDDB) characteristics. Furthermore, this technique is promising for the 64 and 256-Mb dynamic-random-access-memory (DRAM) applications because the process temperatures never exceed 850° C.

Original languageEnglish
Pages (from-to)509-511
Number of pages3
JournalIEEE Electron Device Letters
Volume16
Issue number11
DOIs
StatePublished - 1 Jan 1995

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