Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss of mobile communication systems

Satoshi Makioka*, Yoshiharu Anda, Kazuo Miyatsuji, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

An extremely low loss switch IC has been implemented by using 0.15 μm-gate super self-aligned FET with reduced drain/source area. Both off-state-capacitance and the specific on-resistance of the implemented FET have been dramatically reduced by the novel device structure. The experimentally fabricated switch IC showed the low insertion loss of 0.25 dB at added power of 35 dBm at a frequency of 0.9 GHz, which is the lowest value ever reported.

Original languageEnglish
Pages (from-to)1510-1514
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume48
Issue number8
DOIs
StatePublished - 1 Aug 2001

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