Subwavelength gratings fabricated on semiconductor substrates via E-beam lithography and lift-off method

Kien-Wen Sun*, Shih Chieh Huang, Ara Kechiantz, Chien Ping Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We present results of the fabrication and measurements on reflective polarizers consisting of stacked bi-layer subwavelength metal gratings prepared on GaAs (100) substrates. These linear gratings were fabricated using electron-beam direct-writing lithography and the lift-off method with periods less than the wavelength of light used for measurements. At normal incidence, the polarizer reflects the light polarized perpendicular to the grating lines (transverse magnetic polarization, TM polarized) but absorbs parallel-polarized light (transverse electric polarization, TE polarized). By optimizing structural parameters, the polarization extinction ratio close to 20 has been experimentally achieved at wavelength of 650 nm.

Original languageEnglish
Pages (from-to)425-432
Number of pages8
JournalOptical and Quantum Electronics
Volume37
Issue number4
DOIs
StatePublished - 1 Mar 2005

Keywords

  • Birefringence
  • E-beam lithography
  • Polarizer
  • Subwavelength grating

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